We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to insulator transition (SIT) show the same energy gap scale at low temperatures. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding the nature of the insulating state in the disorder induced SIT.
|Number of pages||4|
|Journal||Physical Review Letters|
|State||Published - 2011|