TY - GEN
T1 - A sub-V T 2T gain-cell memory for biomedical applications
AU - Meinerzhagen, P
AU - Teman, A
AU - Mordakhay, A
AU - Burg, A
AU - Fish, A
N1 - Place of conference:USA
PY - 2012
Y1 - 2012
N2 - Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.
AB - Biomedical systems often require several kb of embedded memory and are typically operated in the subthreshold (sub-VT) domain for good energy-efficiency. Embedded memories and their leakage current can easily dominate the overall silicon area and the total power consumption, respectively. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. For the first time, this paper presents a gain-cell array which is fully functional in the sub-VT regime and achieves a data retention time that is more than 104 times higher than the access time. Monte Carlos simulations show that the 2 kb gain-cell array, implemented in a mature 0.18μm CMOS node and supplied with a sub-VT voltage of 400mV, exhibits robust write and read operations at 500 kHz under parametric variations and has over 99% availibilty for read and write access.
UR - https://scholar.google.co.il/scholar?q=A+sub-VT+2T+gain-cell+memory+for+biomedical+applications&btnG=&hl=en&as_sdt=0%2C5
UR - https://scholar.google.co.il/scholar?q=A+Sub-VT+2T+Gain-Cell+Memory+for+Biomedical+Applications+&btnG=&hl=en&as_sdt=0%2C5
M3 - Conference contribution
BT - Subthreshold Microelectronics Conference (SubVT)
PB - IEEE
ER -
