A ReRAM-based non-volatile flip-flop with sub-V_T read and CMOS voltage-compatible write

Keyphrases

• Resistive Random Access Memory (ReRAM) 100%
• Non-volatile Flip-flop 100%
• ReRAM Devices 60%
• CMOS Technology 40%
• Leakage Power 40%
• Write Energy 40%
• Sleep Period 40%
• Monte Carlo Simulation 20%
• Supply Voltage 20%
• Total Power 20%
• Downscaling 20%
• Embedded Memory 20%
• Supply Voltage Scaling 20%
• On chip 20%
• Power Budget 20%
• Power Energy 20%
• Ultra-low Power 20%
• Subthreshold 20%
• Non-volatile 20%
• System-on-chip 20%
• VLSI Systems 20%
• Energy Dissipation 20%
• Parametric Variation 20%
• Data Storage 20%
• Nominal Value 20%
• Device Technology 20%
• Active Energy 20%
• Low Power VLSI 20%
• MOS Transistor 20%
• Data State 20%
• Embedded pipeline 20%
• Near-threshold 20%
• Zero Leakage 20%
• Program State 20%
• Data Restore 20%
• Pipeline Registers 20%
• Chip Data 20%

Engineering

• Flip Flop Circuits 100%
• Supply Voltage 100%
• Transistor 50%
• Resistive 50%
• Energy Dissipation 50%
• Voltage Scaling 50%
• System-on-Chip 50%
• Power Budget 50%