A novel technique for RTP annealing of compound semiconductors

M. Fu; V. Sarvepalli; R. K. Singh; C. R. Abernathy; X. Cao; S. J. Pearton; J. A. Sekhar

doi:10.1016/s0038-1101(98)00236-6

A novel technique for RTP annealing of compound semiconductors

M. Fu, V. Sarvepalli, R. K. Singh, C. R. Abernathy, X. Cao, S. J. Pearton, J. A. Sekhar

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much higher temperatures (>1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si⁺-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si⁺ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.

Original language	English
Pages (from-to)	2335-2340
Number of pages	6
Journal	Solid-State Electronics
Volume	42
Issue number	12
DOIs	https://doi.org/10.1016/s0038-1101(98)00236-6
State	Published - Dec 1998
Externally published	Yes

Funding

This work is partially supported by the Ballistic Missile Defense Organization (BMDO) of the U.S. Department of Defense through the SBIR program under Contract No. F19628-97-C-0092. Dr. Joseph Lorenzo is the contract monitor. MHI funding of the University of Florida effort is gratefully acknowledged.

Funders	Funder number
Ballistic Missile Defense Organization
U.S. Department of Defense
Small Business Innovation Research	F19628-97-C-0092

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title = "A novel technique for RTP annealing of compound semiconductors",

abstract = "We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper{\texttrademark}, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper{\texttrademark} unit is capable of reaching much higher temperatures (>1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper{\texttrademark} unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper{\texttrademark} unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.",

author = "M. Fu and V. Sarvepalli and Singh, {R. K.} and Abernathy, {C. R.} and X. Cao and Pearton, {S. J.} and Sekhar, {J. A.}",

year = "1998",

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AU - Fu, M.

AU - Sarvepalli, V.

AU - Singh, R. K.

AU - Abernathy, C. R.

AU - Cao, X.

AU - Pearton, S. J.

AU - Sekhar, J. A.

PY - 1998/12

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N2 - We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much higher temperatures (>1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.

AB - We introduce for the first time a novel rapid thermal processing (RTP) unit called Zapper™, which has recently been developed by MHI Inc. and the University of Florida, for high temperature thermal processing of semiconductors. This Zapper™ unit is capable of reaching much higher temperatures (>1500°C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) using the Zapper™ unit at temperatures up to 1500°C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the Zapper™ unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide band-gap (WBG) compound semiconductors that require very high processing temperatures.

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A novel technique for RTP annealing of compound semiconductors

Abstract

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