TY - JOUR
T1 - A new route to nondestructive top-contacts for molecular electronics on Si
T2 - Pb evaporated on organic monolayers
AU - Lovrinčić, Robert
AU - Kraynis, Olga
AU - Har-Lavan, Rotem
AU - Haj-Yahya, Abd Elrazek
AU - Li, Wenjie
AU - Vilan, Ayelet
AU - Cahen, David
PY - 2013/2/7
Y1 - 2013/2/7
N2 - Thermally evaporated Pb preserves the electronic properties of an organic monolayer (ML) on Si and surface passivation of the Si surface itself. The obtained current-voltage characteristics of Pb/ML/Si junctions agree with results obtained with the well-established Hg contact and preserve both the molecule-induced dipole effect on, and length-attenuation of, the current. We rationalize our findings by the lack of interaction between the Pb and the Si substrate. This method is fast, scalable, and compatible with standard semiconductor processing, results in close to 100% yield, and can help the development of large-scale utilization of silicon-organic hybrid electronics. Our experimental data show a dependence of the transport across the molecules on the substrate orientation, expressed in the smaller distance decay parameter with Si(100) than that with Si(111).
AB - Thermally evaporated Pb preserves the electronic properties of an organic monolayer (ML) on Si and surface passivation of the Si surface itself. The obtained current-voltage characteristics of Pb/ML/Si junctions agree with results obtained with the well-established Hg contact and preserve both the molecule-induced dipole effect on, and length-attenuation of, the current. We rationalize our findings by the lack of interaction between the Pb and the Si substrate. This method is fast, scalable, and compatible with standard semiconductor processing, results in close to 100% yield, and can help the development of large-scale utilization of silicon-organic hybrid electronics. Our experimental data show a dependence of the transport across the molecules on the substrate orientation, expressed in the smaller distance decay parameter with Si(100) than that with Si(111).
KW - metal semiconductor interfaces
KW - molecular electronics
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84873456040&partnerID=8YFLogxK
U2 - 10.1021/jz302153z
DO - 10.1021/jz302153z
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AN - SCOPUS:84873456040
SN - 1948-7185
VL - 4
SP - 426
EP - 430
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 3
ER -