Abstract
A Fully symmetric multi-turn twisted inductor is presented for the suppression of on-chip interference in the transmit chain of a LTE transceiver chip implemented in TSMC 65nm CMOS process. The inductor is ultra-compact, symmetrical and presents up to ×3 inductance density as compared to a standard spiral inductor. Magnetic coupling reduction of more than 12dB was measured and EM simulation results validate the design procedure. A simple and accurate closed form expression for the inductance estimation is introduced for the first time in the context of planar twisted-inductors to simplify the design process.
Original language | English |
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Title of host publication | 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509021529 |
DOIs | |
State | Published - 4 Jan 2017 |
Externally published | Yes |
Event | 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 - Eilat, Israel Duration: 16 Nov 2016 → 18 Nov 2016 |
Publication series
Name | 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 |
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Conference
Conference | 2016 IEEE International Conference on the Science of Electrical Engineering, ICSEE 2016 |
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Country/Territory | Israel |
City | Eilat |
Period | 16/11/16 → 18/11/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
Keywords
- Figure-8 inductor
- Injection-Lock Divider
- Twisted-Inductor
- closed-form inductance expression
- crosstalk