A method to improve reliability in a 65-nm SRAM PUF array

Yizhak Shifman, Avi Miller, Osnat Keren, Yoav Weizmann, Joseph Shor

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

A modified weak SRAM physical unclonable function (PUF) is proposed which is much more reliable than prior-art SRAM PUFs. The proposed PUF was fabricated in TSMC 65-nm process. A novel preselection test was run on these PUF arrays and is shown to eliminate all of the unstable cells (20%-25%). This PUF can drastically reduce the need for error correction codes. In addition, the preselection test can be accomplished in one VDD/temperature corner, which reduces the testing cost of finding unstable bits across many such corners, as is done in the prior art.

Original languageEnglish
Article number8519616
Pages (from-to)138-141
Number of pages4
JournalIEEE Solid-State Circuits Letters
Volume1
Issue number6
DOIs
StatePublished - 2018

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • Physical unclonable function (PUF)
  • SRAM
  • preselection

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