Abstract
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristorbased multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell lay grounds for full integration of memristor multibit memory cell.
Original language | English |
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Pages (from-to) | 425-430 |
Number of pages | 6 |
Journal | Radioengineering |
Volume | 24 |
Issue number | 2 |
DOIs | |
State | Published - 2015 |
Keywords
- Memristor
- Multi-bit memory
- Noise margin