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A k·p model of InAs/GaSb type II superlattice infrared detectors
P. C. Klipstein
, Y. Livneh
, O. Klin
, S. Grossman
, N. Snapi
, A. Glozman
, E. Weiss
SemiConductor Devices
Tel Aviv University
Research output
:
Contribution to journal
›
Article
›
peer-review
25
Scopus citations
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Keyphrases
Band Gap
100%
GaSb
100%
Type-II Superlattice
100%
Infrared Detector
100%
Absorption Spectra
66%
Superlattices
50%
Layer Width
50%
Luttinger Parameters
33%
In Situ
16%
Envelope Function
16%
Reactor
16%
Spectral Response
16%
Blue Shift
16%
Kane's Method
16%
Measured Spectrum
16%
Detector Response
16%
Band Offset
16%
Experimental Uncertainty
16%
Cutoff Wavelength
16%
Superlattice
16%
Superlattice Structure
16%
Electron Mass
16%
Detector Structure
16%
Flux Measurement
16%
Valence Band Offset
16%
Barrier Detectors
16%
Mass Coefficients
16%
E1 Transitions
16%
Interface Parameters
16%
Compliance Coefficient
16%
Deformation Potential
16%
Zones Boundary
16%
Engineering
Superlattice
100%
Monolayer
100%
Fitting Parameter
66%
Hamiltonian
66%
Band Offset
66%
Energy Engineering
33%
Spectral Response
33%
Measured Spectrum
33%
Experimental Uncertainty
33%
Envelope Function
33%
Input Parameter
33%
Cutoff Wavelength
33%
Blueshift
33%
Valence Band
33%
Superlattice Structure
33%
Physics
Infrared Detector
100%
Superlattice
100%
Energy Gaps (Solid State)
100%
Absorption Spectra
66%
Hamiltonian Function
16%
Blue Shift
16%
Spectral Sensitivity
16%
Electron Mass
16%