A four-state magnetic tunnel junction switchable with spin-orbit torques

Shubhankar Das, Ariel Zaig, Moty Schultz, Susana Cardoso, Diana C. Leitao, Lior Klein

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCEs). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques, which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step toward fabricating multi-level MTJs with numerous resistance states, which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

Original languageEnglish
Article number072404
JournalApplied Physics Letters
Volume117
Issue number7
DOIs
StatePublished - 17 Aug 2020

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