A four-state magnetic tunnel junction switchable with spin-orbit torques

Shubhankar Das; Ariel Zaig; Moty Schultz; Susana Cardoso; Diana C. Leitao; Lior Klein

doi:10.1063/5.0014771

A four-state magnetic tunnel junction switchable with spin-orbit torques

Shubhankar Das, Ariel Zaig, Moty Schultz, Susana Cardoso, Diana C. Leitao, Lior Klein

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCEs). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques, which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step toward fabricating multi-level MTJs with numerous resistance states, which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.

Original language	English
Article number	072404
Journal	Applied Physics Letters
Volume	117
Issue number	7
DOIs	https://doi.org/10.1063/5.0014771
State	Published - 17 Aug 2020

Bibliographical note

Publisher Copyright:
© 2020 Author(s).

Funding

L.K. acknowledges support from the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities (533/ 15). D.C. Leitao acknowledges financial support through FSE/ POPH. This work was partially supported by the project LISBOA-01-0145-FEDER-031200, PTDC/NAN-MAT/31688/2017, and the National Infrastructure Roadmap MicroNanoFab@PT—NORTE-01-0145-FEDER-22090. FCT funding of the Research Unit INESC MN (UID/05367/2020) through plurianual BASE and PROGRAMATICO financing.

Funders	Funder number
Faculty of Science and Engineering, University of Manchester	LISBOA-01-0145-FEDER-031200, UID/05367/2020, PTDC/NAN-MAT/31688/2017
Israel Academy of Sciences and Humanities	533/ 15
Israel Science Foundation

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abstract = "We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCEs). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques, which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step toward fabricating multi-level MTJs with numerous resistance states, which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.",

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AU - Klein, Lior

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A four-state magnetic tunnel junction switchable with spin-orbit torques

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