A Fast-Gated CMOS Image Sensor with a Vertical Overflow Drain Shutter Mechanism

Erez Tadmor, Assaf Lahav, Giora Yahav, Alexander Fish, David Cohen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


This paper presents a fast-gated CMOS image sensor (CIS) with a vertical overflow drain (VOD) shutter mechanism. The prototype imager includes two novel features: 1) the adaptation of the VOD shutter structure into a 0.18-μm CIS process and 2) the application of the VOD shutter for the purposes of time-resolved imaging with down to 5-ns pulsewidth. A 360-pixel × 180-pixel array with several 5.4-μm × 5.4-μm pixel types was implemented and tested, demonstrating 2-ns shutter rise/fall times and the 1:20 shutter contrast ratio for 850-nm pulsed illumination. These parameters, together with the uniformity of the shutter and the large full-well capacity of the pixel, are on par with the state-of-the-art of indirect time-of-flight and time-resolved imagers. The device structure and the special mode of operation that enables a fast gating are studied through the TCAD simulations and experimental results. Important design features that affect the pixel performance are illustrated in detail.

Original languageEnglish
Article number7131512
Pages (from-to)138-144
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - 1 Jan 2016

Bibliographical note

Publisher Copyright:
© 2015 IEEE.


  • CMOS image sensor (CIS)
  • Time resolved
  • Time-of-flight (TOF) imaging


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