TY - JOUR
T1 - A doped highly compensated crystal semiconductor as a model of amorphous semiconductors
AU - Ryvkin, S. M.
AU - Shlimak, I. S.
PY - 1973/4/16
Y1 - 1973/4/16
N2 - The model of a large‐scale potential relief is used to explain the most striking effects typical for the amorphous semiconductor, the switching and the memory. The potential relief was produced experimentally in a classical crystal semiconductor, n‐germanium, by compensation with fast neutrons. This results in the appearance of properties characteristic for amorphous semiconductors. Both phenomena, the switching and the memory, are revealed. Also other effects essential in context with the ideas developed, are observed. The experimental investigations performed reveal an extensive analogy between highly compensated crystal and amorphous semiconductors.
AB - The model of a large‐scale potential relief is used to explain the most striking effects typical for the amorphous semiconductor, the switching and the memory. The potential relief was produced experimentally in a classical crystal semiconductor, n‐germanium, by compensation with fast neutrons. This results in the appearance of properties characteristic for amorphous semiconductors. Both phenomena, the switching and the memory, are revealed. Also other effects essential in context with the ideas developed, are observed. The experimental investigations performed reveal an extensive analogy between highly compensated crystal and amorphous semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=0015615735&partnerID=8YFLogxK
U2 - 10.1002/pssa.2210160221
DO - 10.1002/pssa.2210160221
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AN - SCOPUS:0015615735
SN - 0031-8965
VL - 16
SP - 515
EP - 526
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 2
ER -