A CMOS low noise amplifier for 5 to 6 GHz wireless applications

Viswanathan Subramanian, Solon Spiegel, Ralf Eickhoff, Georg Boeck

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

This work demonstrates the design of a wideband low noise amplifier in 0.13 um CMOS technology. Important design aspects and the influence of bandwidth improving circuit elements on various LNA performance parameters like gain, matching, noise figure, and stability are analyzed. Simulated and measured LNA results are presented. At the centre frequency of 5.5 GHz the measured LNA performance includes 13.5 dB gain, 3.9 dB noise figure, -9.5 dB and -13.5 dB of input and output return loss, and 1 dB gain compression point at - 8.5 dBm input power respectively. From 5 GHz to 6 GHz a gain drop of less than 1 dB and an average noise figure of 4 dB have been measured. Input referred 1 dB gain compression point better than -8.5 dBm is measured over the entire bandwidth. The LNA dissipates 14 mW from a 1.8 V power supply. Active chip area is 0.28 mm2.

Original languageEnglish
Title of host publication2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC
Pages778-781
Number of pages4
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC - Salvador, Brazil
Duration: 29 Jan 20071 Nov 2007

Publication series

NameSBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings

Conference

Conference2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference, IMOC
Country/TerritoryBrazil
CitySalvador
Period29/01/071/11/07

Keywords

  • Bandwidth enhancement
  • CMOS
  • Inductive shunt peaking
  • Low noise
  • Stability
  • Wideband

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