Charge-pump-controlled MOSFET-C single-amplifier biquad

Hanspeter Schmid; George S. Moschytz

doi:10.1109/iscas.2000.856419

Charge-pump-controlled MOSFET-C single-amplifier biquad

Hanspeter Schmid
, George S. Moschytz

Swiss Federal Institute of Technology Zurich

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The spurious-free dynamic range (SFDR) of a MOSFET-C filter can be increased greatly by generating its tuning voltage with a charge pump. In this paper, we apply this technique to build a Sallen-and-Key lowpass filter with a pole frequency of 24 MHz and a pole Q of 3. It has an SFDR better than 50 dB and consumes 16 mW from a 3.3 V supply. Implemented with a double-poly triple-metal 0.6-μm CMOS process, it covers an area of only 0.11 mm². In addition to a description of the filter and the charge pump, we also discuss linear and non-linear clock feed-through from the charge pump's own ring oscillator, and derive a formula for the optimum voltage swing at the MOSFET-C network nodes.

Original language	English
Pages (from-to)	II-677-II-680
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	2
DOIs	https://doi.org/10.1109/iscas.2000.856419
State	Published - 2000
Externally published	Yes
Event	Proceedings of the IEEE 2000 International Symposium on Circuits and Systems, ISCAS 2000 - Geneva, Switz, Switzerland Duration: 28 May 2000 → 31 May 2000

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10.1109/iscas.2000.856419

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title = "Charge-pump-controlled MOSFET-C single-amplifier biquad",

abstract = "The spurious-free dynamic range (SFDR) of a MOSFET-C filter can be increased greatly by generating its tuning voltage with a charge pump. In this paper, we apply this technique to build a Sallen-and-Key lowpass filter with a pole frequency of 24 MHz and a pole Q of 3. It has an SFDR better than 50 dB and consumes 16 mW from a 3.3 V supply. Implemented with a double-poly triple-metal 0.6-μm CMOS process, it covers an area of only 0.11 mm2. In addition to a description of the filter and the charge pump, we also discuss linear and non-linear clock feed-through from the charge pump's own ring oscillator, and derive a formula for the optimum voltage swing at the MOSFET-C network nodes.",

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doi = "10.1109/iscas.2000.856419",

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note = "Proceedings of the IEEE 2000 International Symposium on Circuits and Systems, ISCAS 2000 ; Conference date: 28-05-2000 Through 31-05-2000",

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AU - Schmid, Hanspeter

AU - Moschytz, George S.

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N2 - The spurious-free dynamic range (SFDR) of a MOSFET-C filter can be increased greatly by generating its tuning voltage with a charge pump. In this paper, we apply this technique to build a Sallen-and-Key lowpass filter with a pole frequency of 24 MHz and a pole Q of 3. It has an SFDR better than 50 dB and consumes 16 mW from a 3.3 V supply. Implemented with a double-poly triple-metal 0.6-μm CMOS process, it covers an area of only 0.11 mm2. In addition to a description of the filter and the charge pump, we also discuss linear and non-linear clock feed-through from the charge pump's own ring oscillator, and derive a formula for the optimum voltage swing at the MOSFET-C network nodes.

AB - The spurious-free dynamic range (SFDR) of a MOSFET-C filter can be increased greatly by generating its tuning voltage with a charge pump. In this paper, we apply this technique to build a Sallen-and-Key lowpass filter with a pole frequency of 24 MHz and a pole Q of 3. It has an SFDR better than 50 dB and consumes 16 mW from a 3.3 V supply. Implemented with a double-poly triple-metal 0.6-μm CMOS process, it covers an area of only 0.11 mm2. In addition to a description of the filter and the charge pump, we also discuss linear and non-linear clock feed-through from the charge pump's own ring oscillator, and derive a formula for the optimum voltage swing at the MOSFET-C network nodes.

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T2 - Proceedings of the IEEE 2000 International Symposium on Circuits and Systems, ISCAS 2000

Y2 - 28 May 2000 through 31 May 2000

ER -

Charge-pump-controlled MOSFET-C single-amplifier biquad

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