A 90-nm CMOS power amplifier for 802.16e (WiMAX) applications

Ofir Degani, Fabian Cossoy, Shay Shahaf, Emanuel Cohen, Vladimir Kravtsov, Omry Sendik, Debopriyo Chowdhury, Christopher D. Hull, Shmuel Ravid

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


In this paper, we demonstrate a single-stage 90-nm CMOS power amplifier (PA) for 2.3-2.7-GHz WiMAX (802.16e) band applications. An integrated balun is used to match the output to 50-Ω load. The PA gain and saturated power (PSAT) are +18 and +32 dBm, respectively, working from a 3.3-V supply, with a peak power-added efficiency of 48%. A digital-predistortion technique is used to enhance the PA linearity. The measured error vector magnitude for a 64 quadrature amplitude modulation orthogonal frequency-division multiplexing signal is improved from 24 to 30 dB at +25-dBm output power. Compliance with the 802.16e standard 10-MHz WiMAX mask and Federal Communications Commission regulations is demonstrated at +25 dBm of output power with power efficiency of ∼ 25% and with a measured second harmonic level of -31 dBm/MHz. Using a crest factor reduction technique, mask compliance is achieved at +27 dBm with tradeoff on EVM = -20 dB, sufficient for quadrature phase-shift keying.

Original languageEnglish
Article number5438821
Pages (from-to)1431-1437
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number5 PART 2
StatePublished - May 2010
Externally publishedYes


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