TY - JOUR
T1 - A 90-nm CMOS power amplifier for 802.16e (WiMAX) applications
AU - Degani, Ofir
AU - Cossoy, Fabian
AU - Shahaf, Shay
AU - Cohen, Emanuel
AU - Kravtsov, Vladimir
AU - Sendik, Omry
AU - Chowdhury, Debopriyo
AU - Hull, Christopher D.
AU - Ravid, Shmuel
PY - 2010/5
Y1 - 2010/5
N2 - In this paper, we demonstrate a single-stage 90-nm CMOS power amplifier (PA) for 2.3-2.7-GHz WiMAX (802.16e) band applications. An integrated balun is used to match the output to 50-Ω load. The PA gain and saturated power (PSAT) are +18 and +32 dBm, respectively, working from a 3.3-V supply, with a peak power-added efficiency of 48%. A digital-predistortion technique is used to enhance the PA linearity. The measured error vector magnitude for a 64 quadrature amplitude modulation orthogonal frequency-division multiplexing signal is improved from 24 to 30 dB at +25-dBm output power. Compliance with the 802.16e standard 10-MHz WiMAX mask and Federal Communications Commission regulations is demonstrated at +25 dBm of output power with power efficiency of ∼ 25% and with a measured second harmonic level of -31 dBm/MHz. Using a crest factor reduction technique, mask compliance is achieved at +27 dBm with tradeoff on EVM = -20 dB, sufficient for quadrature phase-shift keying.
AB - In this paper, we demonstrate a single-stage 90-nm CMOS power amplifier (PA) for 2.3-2.7-GHz WiMAX (802.16e) band applications. An integrated balun is used to match the output to 50-Ω load. The PA gain and saturated power (PSAT) are +18 and +32 dBm, respectively, working from a 3.3-V supply, with a peak power-added efficiency of 48%. A digital-predistortion technique is used to enhance the PA linearity. The measured error vector magnitude for a 64 quadrature amplitude modulation orthogonal frequency-division multiplexing signal is improved from 24 to 30 dB at +25-dBm output power. Compliance with the 802.16e standard 10-MHz WiMAX mask and Federal Communications Commission regulations is demonstrated at +25 dBm of output power with power efficiency of ∼ 25% and with a measured second harmonic level of -31 dBm/MHz. Using a crest factor reduction technique, mask compliance is achieved at +27 dBm with tradeoff on EVM = -20 dB, sufficient for quadrature phase-shift keying.
UR - http://www.scopus.com/inward/record.url?scp=77952425220&partnerID=8YFLogxK
U2 - 10.1109/tmtt.2010.2042906
DO - 10.1109/tmtt.2010.2042906
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AN - SCOPUS:77952425220
SN - 0018-9480
VL - 58
SP - 1431
EP - 1437
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 5 PART 2
M1 - 5438821
ER -