A 700-µm2, Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET

Yosef Lempel; Rinat Breuer; Joseph Shor

doi:10.1109/TVLSI.2021.3137338

A 700-µm², Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET

Yosef Lempel, Rinat Breuer, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/TVLSI.2021.3137338
State	Published - 1 Feb 2022

Bibliographical note

Publisher Copyright:
© 1993-2012 IEEE.

Keywords

CMOS
microprocessors
ring oscillator
thermal sensor

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/TVLSI.2021.3137338

Cite this

@article{d6a4d4aee29b4dc8b74c751314c7b579,

title = "A 700-µm2, Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET",

abstract = "Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.",

keywords = "CMOS, microprocessors, ring oscillator, thermal sensor",

author = "Yosef Lempel and Rinat Breuer and Joseph Shor",

note = "Publisher Copyright: {\textcopyright} 1993-2012 IEEE.",

year = "2022",

month = feb,

day = "1",

doi = "10.1109/TVLSI.2021.3137338",

language = "אנגלית",

volume = "30",

pages = "248--252",

journal = "IEEE Transactions on Very Large Scale Integration (VLSI) Systems",

issn = "1063-8210",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A 700-µm2, Ring-Oscillator-Based Thermal Sensor in 16-nm FinFET

AU - Lempel, Yosef

AU - Breuer, Rinat

AU - Shor, Joseph

PY - 2022/2/1

Y1 - 2022/2/1

N2 - Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

AB - Temperature monitoring and regulation is a critical power/performance feature in microprocessors. Due to the multiplicity of hotspots, a large number of on-die sensors are utilized. This requires them to be highly compact, low energy and fast. A miniaturized current controlled oscillator (CCO) sensor is described for this application. It has an area of only 700 μ m2 in the 16-nm FinFET process, with an energy consumption of 0.25 nJ in a 6.9- μ s conversion. The inaccuracy is within ±1.5 °C peak-to-peak (p-p) over a 130 °C range, at a resolution of 0.32 °C. These characteristics make the circuit attractive for high-density thermal sensing.

KW - CMOS

KW - microprocessors

KW - ring oscillator

KW - thermal sensor

UR - http://www.scopus.com/inward/record.url?scp=85123375315&partnerID=8YFLogxK

U2 - 10.1109/TVLSI.2021.3137338

DO - 10.1109/TVLSI.2021.3137338

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85123375315

SN - 1063-8210

VL - 30

SP - 248

EP - 252

JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IS - 2

ER -