A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate

E Maayan; R Dvir; J. Shor; Y Polansky; Y Sofer; Ilan Bloom; Dror Avni; B Eitan; Z Cohen; M Meyassed; Y Alpern

A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate

E Maayan, R Dvir, J. Shor, Y Polansky, Y Sofer, Ilan Bloom, Dror Avni, B Eitan, Z Cohen, M Meyassed, Y Alpern

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	American English
Title of host publication	Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC
Publisher	IEEE
State	Published - 2002

Bibliographical note

Place of conference:USA

Cite this

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title = "A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate",

author = "E Maayan and R Dvir and J. Shor and Y Polansky and Y Sofer and Ilan Bloom and Dror Avni and B Eitan and Z Cohen and M Meyassed and Y Alpern",

note = "Place of conference:USA",

year = "2002",

language = "American English",

booktitle = "Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC",

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TY - GEN

T1 - A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate

AU - Maayan, E

AU - Dvir, R

AU - Shor, J.

AU - Polansky, Y

AU - Sofer, Y

AU - Bloom, Ilan

AU - Avni, Dror

AU - Eitan, B

AU - Cohen, Z

AU - Meyassed, M

AU - Alpern, Y

N1 - Place of conference:USA

PY - 2002

Y1 - 2002

UR - https://scholar.google.co.il/scholar?q=A+512Mb+NROM+Flash+Data+Storage+Memory+with+8MB%2Fs+Data+rate&btnG=&hl=en&as_sdt=0%2C5

M3 - Conference contribution

BT - Solid-State Circuits Conference, 2002. Digest of Technical Papers. ISSCC

PB - IEEE

ER -

A 512Mb NROM Flash Data Storage Memory with 8MB/s Data rate

Bibliographical note

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Cite this