TY - JOUR
T1 - A 512 Mb NROM flash data storage memory with 8 MB/s data rate
AU - Maayan, Eduardo
AU - Dvir, Ran
AU - Shor, Joseph
AU - Polansky, Yan
AU - Sofer, Yair
AU - Bloom, Ilan
AU - Avni, Dror
AU - Eitan, Boaz
AU - Cohen, Zeev
AU - Meyassed, Moshe
AU - Alpern, Yair
AU - Palm, Herbert
AU - Kamienski, Elard Stein V.
AU - Haibach, Patrick
AU - Caspary, Dirk
AU - Riedel, Stephan
AU - Knöfler, Roman
PY - 2002
Y1 - 2002
N2 - A 512 Mb NROM flash data storage memory with 8 MB/s data rate is presented. The NROM cell is a non-volatile memory device based on localized charge trapping. The cell is an n-channel metal oxide semiconductor field effect transistor (MOSFET) device where the gate dielectric is replaced by an ONO stack layer. The block diagram of the 512 Mb NROM-based data storage device was shown and the results showed that the device used a single 3 V supply for read and write operations.
AB - A 512 Mb NROM flash data storage memory with 8 MB/s data rate is presented. The NROM cell is a non-volatile memory device based on localized charge trapping. The cell is an n-channel metal oxide semiconductor field effect transistor (MOSFET) device where the gate dielectric is replaced by an ONO stack layer. The block diagram of the 512 Mb NROM-based data storage device was shown and the results showed that the device used a single 3 V supply for read and write operations.
UR - https://www.scopus.com/pages/publications/0036117639
U2 - 10.1109/isscc.2002.992958
DO - 10.1109/isscc.2002.992958
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AN - SCOPUS:0036117639
SN - 0193-6530
SP - 100
EP - 101
JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
ER -