A 512 Mb NROM flash data storage memory with 8 MB/s data rate

Eduardo Maayan; Ran Dvir; Joseph Shor; Yan Polansky; Yair Sofer; Ilan Bloom; Dror Avni; Boaz Eitan; Zeev Cohen; Moshe Meyassed; Yair Alpern; Herbert Palm; Elard Stein V. Kamienski; Patrick Haibach; Dirk Caspary; Stephan Riedel; Roman Knöfler

A 512 Mb NROM flash data storage memory with 8 MB/s data rate

Eduardo Maayan, Ran Dvir, Joseph Shor, Yan Polansky, Yair Sofer, Ilan Bloom, Dror Avni, Boaz Eitan, Zeev Cohen, Moshe Meyassed, Yair Alpern, Herbert Palm, Elard Stein V. Kamienski, Patrick Haibach, Dirk Caspary, Stephan Riedel, Roman Knöfler

Saifun Semiconductors Ltd.

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

The NROM technology is applied to EEPROM, Flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize versatility of the concept.

Original language	English
Pages (from-to)	76-77+407
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Issue number	SUPPL.
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States Duration: 3 Feb 2002 → 7 Feb 2002

Cite this

Maayan, E., Dvir, R., Shor, J., Polansky, Y., Sofer, Y., Bloom, I., Avni, D., Eitan, B., Cohen, Z., Meyassed, M., Alpern, Y., Palm, H., Kamienski, E. S. V., Haibach, P., Caspary, D., Riedel, S., & Knöfler, R. (2002). A 512 Mb NROM flash data storage memory with 8 MB/s data rate. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, (SUPPL.), 76-77+407.

@article{208e5b48d4e14a68a958dc3240b1de18,

title = "A 512 Mb NROM flash data storage memory with 8 MB/s data rate",

abstract = "The NROM technology is applied to EEPROM, Flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize versatility of the concept.",

author = "Eduardo Maayan and Ran Dvir and Joseph Shor and Yan Polansky and Yair Sofer and Ilan Bloom and Dror Avni and Boaz Eitan and Zeev Cohen and Moshe Meyassed and Yair Alpern and Herbert Palm and Kamienski, {Elard Stein V.} and Patrick Haibach and Dirk Caspary and Stephan Riedel and Roman Kn{\"o}fler",

year = "2002",

language = "אנגלית",

pages = "76--77+407",

journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "SUPPL.",

note = "2002 IEEE International Solid-State Circuits Conference ; Conference date: 03-02-2002 Through 07-02-2002",

}

TY - JOUR

T1 - A 512 Mb NROM flash data storage memory with 8 MB/s data rate

AU - Maayan, Eduardo

AU - Dvir, Ran

AU - Shor, Joseph

AU - Polansky, Yan

AU - Sofer, Yair

AU - Bloom, Ilan

AU - Avni, Dror

AU - Eitan, Boaz

AU - Cohen, Zeev

AU - Meyassed, Moshe

AU - Alpern, Yair

AU - Palm, Herbert

AU - Kamienski, Elard Stein V.

AU - Haibach, Patrick

AU - Caspary, Dirk

AU - Riedel, Stephan

AU - Knöfler, Roman

PY - 2002

Y1 - 2002

N2 - The NROM technology is applied to EEPROM, Flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize versatility of the concept.

AB - The NROM technology is applied to EEPROM, Flash, and data storage product lines. All the products are based on the two-bit-per-cell core technology, using common design concepts, algorithms, circuits, and the same process architecture. Differing product requirements emphasize versatility of the concept.

UR - http://www.scopus.com/inward/record.url?scp=0036224246&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0036117639

SN - 0193-6530

SP - 76-77+407

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

IS - SUPPL.

T2 - 2002 IEEE International Solid-State Circuits Conference

Y2 - 3 February 2002 through 7 February 2002

ER -

A 512 Mb NROM flash data storage memory with 8 MB/s data rate

Abstract

Other files and links

Fingerprint

Cite this