A 5-Transistor Ternary Gain-Cell eDRAM with Parallel Sensing

Keyphrases

• Transistor 100%
• Gain Cell 100%
• EDRAM 100%
• Parallel Sensing 100%
• Static Random Access Memory 75%
• 65nm CMOS 25%
• Embedded Memory 25%
• Static Power 25%
• Standard CMOS Technology 25%
• Logic Compatible 25%
• Voltage Level 25%
• Technology Node 25%
• Sensing Scheme 25%
• System-on-chip 25%
• VLSI Systems 25%
• Energy per Bit 25%
• Area Reduction 25%
• Area Cost 25%
• Inverter 25%
• Storage Solution 25%
• Memory Cell 25%
• Low Overhead 25%
• Write Driver 25%
• Low Power Logic 25%
• Dominant Technology 25%

Computer Science

• Static Random Access Memory 100%
• Static Power 33%
• embedded memory 33%
• Silicon Footprint 33%
• System-on-Chip 33%
• Storage Solution 33%

Engineering

• Random Access Memory 100%
• Energy Engineering 33%
• Nodes 33%
• System-on-Chip 33%
• Far Cell 33%