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A 4-Transistor nMOS-Only Logic-Compatible Gain-Cell Embedded DRAM with over 1.6-ms Retention Time at 700 mV in 28-nm FD-SOI
- Robert Giterman
- , Alexander Fish
- , Andreas Burg
- , Adam Teman
Research output: Contribution to journal › Article › peer-review
40
Scopus
citations