A 16-kB 65-nm GC-eDRAM Macro With Internal Bias Voltage Generation Providing Over 100-μs Retention Time

Gain-cell embedded dynamic random access memory (GC-eDRAM) has emerged as a suitable choice for embedded memory implementation due to its high density, low leakage current, and voltage scaling compatibility. This work presents a 16-kB 3T-1C GC-eDRAM macro, featuring an innovative internal reference voltage generation mechanism and an on-chip dc–dc converter for internal boosted supply generation. The memory architecture is partitioned to efficiently accommodate the reference generation and implement a variation-tolerant sensing scheme. The on-chip dc–dc converter is employed for internally generating a boosted voltage that enhances charge retention to increase the data retention time (DRT). The memory macro was implemented in a 65-nm CMOS technology and fabricated as part of a research test chip. Measurements across a spectrum of boosted voltages and different temperature points, show a significant improvement in DRT compared with similar GC-eDRAM designs, without compromising area, performance, or power dissipation.