TY - JOUR
T1 - A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) with Tunable Hamming Distance
AU - Garzon, Esteban
AU - Rechef, Eyal
AU - Golman, Roman
AU - Harel, Odem
AU - Harary, Yuval
AU - Snapir, Paz
AU - Lanuzza, Marco
AU - Teman, Adam
AU - Yavits, Leonid
N1 - Publisher Copyright:
© 1966-2012 IEEE.
PY - 2025
Y1 - 2025
N2 - The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified nor-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains F1 score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.
AB - The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified nor-type associative memory cell that leverages the discharge speed of the matchline (ML) to directly measure the HD between the stored and the query patterns. This novel approach enables efficient in-memory approximate matching. The proposed design was fabricated in a 65-nm technology, running at 125 MHz with an operating voltage of 1.2 V and consuming approximately 0.2 fJ/bit/search at room temperature. HD-CAM features a user-programmable HD tolerance threshold, making it particularly efficient for compare-intensive applications, such as genome analysis, text processing, and database processing. Silicon measurements demonstrate that HD-CAM maintains F1 score above 90% under process, voltage, and temperature (PVT) variations across a range of HDs.
KW - Approximate search
KW - Hamming distance (HD)
KW - associative memory
KW - content addressable memory (CAM)
KW - similarity search
UR - http://www.scopus.com/inward/record.url?scp=85216120480&partnerID=8YFLogxK
U2 - 10.1109/jssc.2025.3529715
DO - 10.1109/jssc.2025.3529715
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AN - SCOPUS:85216120480
SN - 0018-9200
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
ER -