A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm

Asaf Feldman; Joseph Shor

doi:10.1109/esscirc59616.2023.10268740

A 0.0106 mm²8nW Resistor-Less BJT Bandgap Reference in 65nm

Asaf Feldman
, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59%.

Original language	English
Title of host publication	ESSCIRC 2023 - IEEE 49th European Solid State Circuits Conference
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Electronic)	9798350304206
DOIs	https://doi.org/10.1109/esscirc59616.2023.10268740
State	Published - 2023
Event	49th IEEE European Solid State Circuits Conference, ESSCIRC 2023 - Lisbon, Portugal Duration: 11 Sep 2023 → 14 Sep 2023

Publication series

Name	European Solid-State Circuits Conference
Volume	2023-September
ISSN (Print)	1930-8833

Conference

Conference	49th IEEE European Solid State Circuits Conference, ESSCIRC 2023
Country/Territory	Portugal
City	Lisbon
Period	11/09/23 → 14/09/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Funding

ACKNOLEGMENT This work was sponsored by the Israel Science Foundation.

Funders
Israel Science Foundation

Keywords

BGREF
BJT
Bandgap Reference
CMOS
Low Power

Access to Document

10.1109/esscirc59616.2023.10268740

Cite this

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title = "A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm",

abstract = "A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59\%.",

keywords = "BGREF, BJT, Bandgap Reference, CMOS, Low Power",

author = "Asaf Feldman and Joseph Shor",

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Feldman, A & Shor, J 2023, A 0.0106 mm²8nW Resistor-Less BJT Bandgap Reference in 65nm. in ESSCIRC 2023 - IEEE 49th European Solid State Circuits Conference. European Solid-State Circuits Conference, vol. 2023-September, IEEE Computer Society, pp. 85-88, 49th IEEE European Solid State Circuits Conference, ESSCIRC 2023, Lisbon, Portugal, 11/09/23. https://doi.org/10.1109/esscirc59616.2023.10268740

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AB - A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59%.

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