A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm

Asaf Feldman; Joseph Shor

doi:10.1109/esscirc59616.2023.10268740

A 0.0106 mm²8nW Resistor-Less BJT Bandgap Reference in 65nm

Asaf Feldman, Joseph Shor

Bar-Ilan University - The Alexander Kofkin Faculty of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59%.

Original language	English
Title of host publication	ESSCIRC 2023 - IEEE 49th European Solid State Circuits Conference
Publisher	IEEE Computer Society
Pages	85-88
Number of pages	4
ISBN (Electronic)	9798350304206
DOIs	https://doi.org/10.1109/esscirc59616.2023.10268740
State	Published - 2023
Event	49th IEEE European Solid State Circuits Conference, ESSCIRC 2023 - Lisbon, Portugal Duration: 11 Sep 2023 → 14 Sep 2023

Publication series

Name	European Solid-State Circuits Conference
Volume	2023-September
ISSN (Print)	1930-8833

Conference

Conference	49th IEEE European Solid State Circuits Conference, ESSCIRC 2023
Country/Territory	Portugal
City	Lisbon
Period	11/09/23 → 14/09/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Funding

ACKNOLEGMENT This work was sponsored by the Israel Science Foundation.

Funders	Funder number
Israel Science Foundation

Keywords

BGREF
BJT
Bandgap Reference
CMOS
Low Power

Access to Document

10.1109/esscirc59616.2023.10268740

Cite this

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title = "A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm",

abstract = "A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59%.",

keywords = "BGREF, BJT, Bandgap Reference, CMOS, Low Power",

author = "Asaf Feldman and Joseph Shor",

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Feldman, A & Shor, J 2023, A 0.0106 mm²8nW Resistor-Less BJT Bandgap Reference in 65nm. in ESSCIRC 2023 - IEEE 49th European Solid State Circuits Conference. European Solid-State Circuits Conference, vol. 2023-September, IEEE Computer Society, pp. 85-88, 49th IEEE European Solid State Circuits Conference, ESSCIRC 2023, Lisbon, Portugal, 11/09/23. https://doi.org/10.1109/esscirc59616.2023.10268740

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