A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm

Asaf Feldman, Joseph Shor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A Resistor-Less BJT based Bandgap Reference circuit is presented in 65nm achieving a power and area of SnW and 0.0106 m m2 respectively. This is achieved by replacing the resistors in the current mode BGREF architecture with switched-capacitor based resistors which can reach GOhms of resistance to reduce power and area significantly. After a two-step trimming process, a measurement of 31 units yielded a mean temperature coefficient of Ill p p m/° C, a PSRR of -38dB and the accuracy at 30° C is 0.59%.

Original languageEnglish
Title of host publicationESSCIRC 2023 - IEEE 49th European Solid State Circuits Conference
PublisherIEEE Computer Society
Pages85-88
Number of pages4
ISBN (Electronic)9798350304206
DOIs
StatePublished - 2023
Event49th IEEE European Solid State Circuits Conference, ESSCIRC 2023 - Lisbon, Portugal
Duration: 11 Sep 202314 Sep 2023

Publication series

NameEuropean Solid-State Circuits Conference
Volume2023-September
ISSN (Print)1930-8833

Conference

Conference49th IEEE European Solid State Circuits Conference, ESSCIRC 2023
Country/TerritoryPortugal
CityLisbon
Period11/09/2314/09/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Funding

ACKNOLEGMENT This work was sponsored by the Israel Science Foundation.

FundersFunder number
Israel Science Foundation

    Keywords

    • BGREF
    • BJT
    • Bandgap Reference
    • CMOS
    • Low Power

    Fingerprint

    Dive into the research topics of 'A 0.0106 mm28nW Resistor-Less BJT Bandgap Reference in 65nm'. Together they form a unique fingerprint.

    Cite this