64-kB 65-nm GC-eDRAM with Half-Select Support and Parallel Refresh Technique

Odem Harel, Emmanuel Nieto Casarrubias, Manuel Eggimann, Frank Gurkaynak, Luca Benini, Adam Teman, Robert Giterman, Andreas Burg

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Gain-cell-embedded DRAM (GC-eDRAM) is an attractive alternative to traditional 6T SRAM, as it offers higher density, lower leakage power, and two-ported functionality. However, its refresh requirement also results in power consumption and memory access limitations. In this letter, we present a GC-eDRAM architecture designed to overcome the refresh disadvantages using a novel technique for improving the availability of the memory. In addition, by using a read-before-write mechanism, half select is supported. The macro avoids the need for supply boosting by employing 3T-1C bitcells and also integrates a replica bit line for optimal access timing to improve performance and power consumption. A 64-kB GC-eDRAM macro was fabricated in a 65-nm process technology, providing a 40% area reduction compared to a 6T SRAM cell, while achieving a 99.99% bit yield with a 16 μ s retention time.

Original languageEnglish
Pages (from-to)170-173
Number of pages4
JournalIEEE Solid-State Circuits Letters
StatePublished - 2022

Bibliographical note

Publisher Copyright:
© 2018 IEEE.


  • SRAM
  • eDRAM
  • embedded memory
  • gain cell
  • refresh
  • retention time
  • system architecture


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