4T gain-cell providing unlimited availability through hidden refresh with 1W1R functionality

Einat Levy, Aharon Sfez, Roman Golman, Odem Harel, Adam Teman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Modern SoCs area and power budgets are often dominated by embedded memories on board of the chip. Gain-cell embedded DRAM is a dense, low power memory solution, supporting low supply voltages; however, it suffers from limited data retention time (DRT) and requires periodic refresh operations, limiting its use only to applications that can tolerate temporary memory blockages. This work presents a novel gain cell design, with robust dual read mechanism, exploiting GC-eDRAM characteristics for double write throughput, supporting low cost hidden refresh mechanism and 100% array availability, providing continuous 1W1R functionality. A 16 kbit memory macro was implemented in 65nm bulk technology offering up-to 20% reduction in bitcell area compared to standard SRAM solution, and up to 3× area reduction compared to 1R1W memory solutions.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728192017
DOIs
StatePublished - 2021
Event53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of
Duration: 22 May 202128 May 2021

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2021-May
ISSN (Print)0271-4310

Conference

Conference53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
Country/TerritoryKorea, Republic of
CityDaegu
Period22/05/2128/05/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE

Funding

ACKNOWLEDGMENTS This work was kindly supported by the Israel Science Foundation under grant number 996/18.

FundersFunder number
Israel Science Foundation996/18

    Keywords

    • 1W1R
    • 2W2R
    • Embedded memory
    • Gain-cell embedded DRAM (GC-eDRAM)
    • Hidden refresh
    • Low power
    • Retention time

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