2D Disordered Electronic System in the Presence of Strong Magnetic Field

S. Sil; S. N. Karmakar; Efrat Shimshoni

doi:10.1007/978-3-540-72632-6_10

2D Disordered Electronic System in the Presence of Strong Magnetic Field

S. Sil
, S. N. Karmakar
, Efrat Shimshoni

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e²=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1^o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).

Original language	English
Title of host publication	Springer Series in Solid-State Sciences
Publisher	Springer Science and Business Media Deutschland GmbH
Pages	305-330
Number of pages	26
DOIs	https://doi.org/10.1007/978-3-540-72632-6_10
State	Published - 2007
Externally published	Yes

Publication series

Name	Springer Series in Solid-State Sciences
Volume	156
ISSN (Print)	0171-1873
ISSN (Electronic)	2197-4179

Bibliographical note

Publisher Copyright:
© 2007, Springer-Verlag Berlin Heidelberg.

Keywords

Edge State
Extended State
Fractional Quantum
Hall Conductance
Landau Level

Access to Document

10.1007/978-3-540-72632-6_10

Cite this

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abstract = "The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e2=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).",

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2D Disordered Electronic System in the Presence of Strong Magnetic Field. / Sil, S.; Karmakar, S. N.; Shimshoni, Efrat.
Springer Series in Solid-State Sciences. Springer Science and Business Media Deutschland GmbH, 2007. p. 305-330 (Springer Series in Solid-State Sciences; Vol. 156).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

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AU - Shimshoni, Efrat

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N2 - The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e2=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).

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KW - Fractional Quantum

KW - Hall Conductance

KW - Landau Level

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2D Disordered Electronic System in the Presence of Strong Magnetic Field

Abstract

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Bibliographical note

Keywords

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