2D Disordered Electronic System in the Presence of Strong Magnetic Field

S. Sil, S. N. Karmakar, Efrat Shimshoni

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e2=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).

Original languageEnglish
Title of host publicationSpringer Series in Solid-State Sciences
PublisherSpringer Science and Business Media Deutschland GmbH
Number of pages26
StatePublished - 2007
Externally publishedYes

Publication series

NameSpringer Series in Solid-State Sciences
ISSN (Print)0171-1873
ISSN (Electronic)2197-4179

Bibliographical note

Publisher Copyright:
© 2007, Springer-Verlag Berlin Heidelberg.


  • Edge State
  • Extended State
  • Fractional Quantum
  • Hall Conductance
  • Landau Level


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