2D Disordered Electronic System in the Presence of Strong Magnetic Field

S. Sil, S. N. Karmakar, Efrat Shimshoni

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

The quantum Hall effect is one of the most remarkable phenomena in condensed matter physics discovered in the second half of the 20th century. In 1980 Klaus von Klitzing [1], who was investigating the magneto-galvanometric properties of the two-dimensional electron gas in high quality Silicon MOSFET in presence of high magnetic field, observed plateaus at integer multiples of the fundamental conductance quantum e2=h in the Hall conductance and a vanishing longitudinal resistivity at a very low temperature (≈ 1o K). This phenomena is known as Integer Quantum Hall Effect (IQHE) (see Fig. 1).

Original languageEnglish
Title of host publicationSpringer Series in Solid-State Sciences
PublisherSpringer Science and Business Media Deutschland GmbH
Pages305-330
Number of pages26
DOIs
StatePublished - 2007
Externally publishedYes

Publication series

NameSpringer Series in Solid-State Sciences
Volume156
ISSN (Print)0171-1873
ISSN (Electronic)2197-4179

Bibliographical note

Publisher Copyright:
© 2007, Springer-Verlag Berlin Heidelberg.

Keywords

  • Edge State
  • Extended State
  • Fractional Quantum
  • Hall Conductance
  • Landau Level

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