1.7 MV Tandem Pelletron accelerator, model 5SDH (NEC, USA)

Rutherford Backscattering Spectroscopy (RBS)
The nondestructive and multielemental analysis technique
Elemental composition (stoichiometry) without a standard (1 - 5% accuracy).
Elemental depth profiles with a depth resolution of 2 - 10 nanometers and a maximum depth of 2 - 20 microns.
Surface impurities and impurity distribution in depth (sensitivity up to the sub-ppm range).
Elemental areal density and thus thickness (or density) of thin films if the film density (or thickness) is known.
Diffusion depth profiles between interfaces up to a few microns below the surface.
Channeling-RBS is used to determine the lattice location of impurities and defect distribution depth profile in single crystalline samples.


Specifications
Nondestructive and multielemental analysis technique
Elemental composition (stoichiometry) without a standard (1 - 5% accuracy).
Elemental depth profiles with a depth resolution of 2 - 10 nanometers and a maximum depth of 2 - 20 microns.
Surface impurities and impurity distribution in depth (sensitivity up to sub-ppm range).
Elemental areal density and thus thickness (or density) of thin films if the film density (or thickness) is known.
Diffusion depth profiles between interfaces up to a few microns below the surface.
Channeling - RBS is used to determine lattice location of impurities and defect distribution depth profile in single crystalline samples